PDN2318S MOSFET: N-Ch, 20V, 4A. Full specification with pinout and replacement list

PDN2318S Specs

..1. Size:465K potens
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20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m @VGS = 4.5V performance, and withstand high energ... See More ⇒

8.1. Size:395K potens
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20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m @VGS=4.5V performance, and withstand high ener... See More ⇒

8.2. Size:499K potens
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20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m @VGS = -4.5V performance, and withstand hi... See More ⇒

8.3. Size:498K potens
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20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m @VGS=-4.5V performance, and withstand high ... See More ⇒

Detailed specifications: PDH0980 , PDH6902 , PDK3908 , PDK6912 , PDN2309S , PDN2311S , PDN2312S , PDN2313S , IRF1405 , PDN3611S , PDN3612S , PDN3909S , PDN3912S , PDN3914S , PDN3916S , PDN4911S , PDN6911S .