PDS6903 MOSFET. Datasheet pdf. Equivalent
Type Designator: PDS6903
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43.8 nC
trⓘ - Rise Time: 13.8 nS
Cossⓘ - Output Capacitance: 162 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
PDS6903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PDS6903 Datasheet (PDF)
pds6903.pdf
60V P-Channel MOSFETs PDS6903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 30m -8.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-8.5A, RDS(ON) =30m@VGS = -10V performance, and withstand high
pds6904.pdf
60V N-Channel MOSFETs PDS6904 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 12m 10A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 60V,10A, RDS(ON) =12m @VGS = 10V performance, and withstand high energ
pds6910.pdf
60V N-Channel MOSFETs PDS6910 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 50m 5.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5.5A, RDS(ON) =
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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