PDS6903 MOSFET: P-Ch, 60V, 8.5A. Full datasheet with pinout, specifications and replacement transistor list

PDS6903 Datasheet (PDF)

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60V P-Channel MOSFETs PDS6903 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -60V 30m -8.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -60V,-8.5A, RDS(ON) =30m@VGS = -10V performance, and withstand high

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60V N-Channel MOSFETs PDS6904 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 12m 10A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 60V,10A, RDS(ON) =12m @VGS = 10V performance, and withstand high energ

9.1. Size:671K potens
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60V N-Channel MOSFETs PDS6910 General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 60V 50m 5.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the 60V,5.5A, RDS(ON) =

Datasheet: PDQ3714 , PDS3712 , PDS3807 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , IRF3205 , PDS6904 , PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 .