PTY80N06 MOSFET Datasheet: N-Ch, 60V, 80A. Full specification with pinout and replacement list

PTY80N06 Specs and Replacement

Type Designator: PTY80N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 365 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO263

PTY80N06 substitution

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PTY80N06 datasheet

..1. Size:3655K cn puolop
ptp80n06 pty80n06.pdf pdf_icon

PTP80N06/PTY80N06 60V/80A N-Chnnel MOSFET Features D 60V/80A RDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche Tested D Application G S Power Supply TO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim... See More ⇒

8.1. Size:3376K cn puolop
ptp80n60 pty80n60.pdf pdf_icon

PTP80N60/PTY80N60 60V/80A N-Chnnel MOSFET Features D 60V/80A RDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche Tested D Application G S Power Supply TO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim... See More ⇒

Detailed specifications: PDS6903, PDS6904, PDS6910, PMEB2516P, PMEN2423S, PTP4N65, PTF4N65, PTP80N06, IRFZ44, PTP80N60, PTY80N60, PTP88N07, PTY88N07, PTP90N08, PTY90N08, PTQ45P02, PTS2017