SK2302AA MOSFET. Datasheet pdf. Equivalent

   Type Designator: SK2302AA
   Marking Code: A2SHB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: SOT23

SK2302AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SK2302AA Datasheet (PDF)

..1. Size:318K cn shikues
sk2302aa.pdf

SK2302AASOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING: A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER

0.1. Size:719K cn shikues
sk2302aat.pdf

SK2302AATSOT-523 Plastic-Encapsulate MOSFETSFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT523 MARKING: 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1

7.1. Size:849K cn shikues
sk2302a.pdf

9.1. Size:878K cn shikues
sk2306.pdf

SK2306N-Channel Enhancement Mode Power MOSFET Description The 2306 uses advanced trench technology to provide SKexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. DGeneral Features VDS = 30V,ID = 3.6A GRDS(ON)

9.2. Size:813K cn shikues
sk2307a.pdf