SK2302AA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SK2302AA
Marking Code: A2SHB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 2.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059
Ohm
Package:
SOT23
SK2302AA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SK2302AA
Datasheet (PDF)
..1. Size:318K cn shikues
sk2302aa.pdf 
SK2302AASOT-23 Plastic-Encapsulate Transistors FEATURES Trench FET Power MOSFET MARKING: A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTER
0.1. Size:719K cn shikues
sk2302aat.pdf
SK2302AATSOT-523 Plastic-Encapsulate MOSFETSFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter SOT523 MARKING: 2302 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1
9.1. Size:878K cn shikues
sk2306.pdf
SK2306N-Channel Enhancement Mode Power MOSFET Description The 2306 uses advanced trench technology to provide SKexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. DGeneral Features VDS = 30V,ID = 3.6A GRDS(ON)
Datasheet: IRFP360LC
, IRFP3710
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, IRFP433
, IRFP440
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, IRFP250
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, IRFP443
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, IRFP450
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, IRFP450LC
, IRFP451
.
