TA75333 Specs and Replacement
Type Designator: TA75333
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO247
TA75333 substitution
- MOSFET ⓘ Cross-Reference Search
TA75333 datasheet
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Detailed specifications: STW9NA60, TA17632, TA17650, TA17656, TA75307, TA75309, TA75321, TA75329, IRF640N, TA75339, TN0104N3, TN0104N8, VN10LF, VN10LP, VN2222LL, ZDM4206N, ZDM4306N
Keywords - TA75333 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK643 | 3SK169Q | 2SJ619 | 3SK59 | 3SK142Q
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