SSA50R140S MOSFET. Datasheet pdf. Equivalent
Type Designator: SSA50R140S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO3P
SSA50R140S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSA50R140S Datasheet (PDF)
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 500V Super Junction Power Transistor SS*50R240S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF50R240S/SSP50R240S/SSW50R240S/SSA50R240S 500V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi proce
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