SWP038R10ES PDF and Equivalents Search

 

SWP038R10ES Specs and Replacement

Type Designator: SWP038R10ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 212 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 171 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

SWP038R10ES substitution

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SWP038R10ES datasheet

 ..1. Size:728K  samwin
 swb038r10es swp038r10es.pdf pdf_icon

SWP038R10ES

SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo... See More ⇒

 ..2. Size:905K  samwin
 sw038r10es swb038r10es swp038r10es swt038r10es.pdf pdf_icon

SWP038R10ES

SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS 100V High ruggedness ID 120A Low RDS(ON) (Typ 3.6m )@VGS=10V RDS(ON) 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application Synchronous Rectification, 2 2 3 3 3 Inverter , ... See More ⇒

 7.1. Size:648K  samwin
 swp038r04vt.pdf pdf_icon

SWP038R10ES

SW038R04VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 40V High ruggedness Low RDS(ON) (Typ 4.3m )@VGS=4.5V ID 95A (Typ 3.8m )@VGS=10V RDS(ON) 4.3m @VGS=4.5V Low Gate Charge (Typ 105nC) Improved dv/dt Capability 3.8m @VGS=10V 100% Avalanche Tested 1 2 Application DC-DC Converter, Motor Control, 3 2 Sy... See More ⇒

 9.1. Size:752K  samwin
 swp036r10e8s swb036r10e8s.pdf pdf_icon

SWP038R10ES

SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 175A Low RDS(ON) (Typ 3.8m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 3.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drivers 1 1. Gate 2.... See More ⇒

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Detailed specifications: SSW50R140S, SSA50R140S, SSF50R240S, SSP50R240S, SSW50R240S, SSA50R240S, SWB035R08ET, SWB038R10ES, 4N60, SWT038R10ES, SWH055R03VT, SWHA055R03VT, SWB075R06ET, SWP075R06ET, SWK088R06VT, SWI088R06VT, SWD088R06VT

Keywords - SWP038R10ES MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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