SWHA15P02
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWHA15P02
Marking Code: SW15P02
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 67
nS
Cossⓘ -
Output Capacitance: 490
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
DFN5X6
SWHA15P02
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWHA15P02
Datasheet (PDF)
..1. Size:997K samwin
swi15p02 swd15p02 swh15p02 swha15p02.pdf 
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
..2. Size:997K samwin
sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
8.1. Size:1004K samwin
swk15n04v swha15n04v.pdf
SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS : 40V DFN5*6 SOP8 5 ID : 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m)@VGS=4.5V 2 7 8 RDS(ON) : 6.5m@ VGS=4.5V 6 3 (Typ 5.8m)@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested
9.1. Size:810K samwin
swk110r06vt swha110r06vt.pdf
SW110R06VTN-channel Enhanced mode SOP8/DFN5*6 MOSFETFeaturesSOP8 DFN5*6 BVDSS : 60V High ruggednessID : 11A1 85 Low RDS(ON) (Typ 11m)@VGS=4.5V6 2 7(Typ 10m)@VGS=10V 76 RDS(ON) : 11m@VGS=4.5V384 5 Low Gate Charge (Typ 69nC)410m@VGS=10V3 Improved dv/dt Capability 2 100% Avalanche Tested 1D Application: Electronic Ballast,
9.2. Size:1050K samwin
swk120r45vt swha120r45vt swi120r45vt.pdf
SW120R45VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness DFN5*6 TO-251 SOP-8 BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V (Typ 10.5m)@VGS=10V 5 ID : 12A 6 1 8 7 Low Gate Charge (Typ 45nC) 8 2 7 RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 6 3 4 4 5 100% Avalanche Tested 3 10.5m@VGS
9.3. Size:734K samwin
swha106r95vs.pdf
SW106R95VS N-channel Enhanced mode DFN5*6 MOSFET Features BVDSS : 95V DFN5*6 High ruggedness ID : 8A Low RDS(ON) (Typ 12.3m)@VGS=4.5V 1 8 (Typ 11.5m)@VGS=10V RDS(ON) : 12.3m@VGS=4.5V 2 7 Low Gate Charge (Typ 123nC) 6 3 11.5m@VGS=10V Improved dv/dt Capability 5 4 100% Avalanche Tested D Application:Synchronous Re
9.4. Size:856K samwin
swha120r45vt.pdf
SW120R45VTN-channel Enhanced mode DFN5*6 MOSFETFeatures High ruggednessDFN5*6BVDSS : 45V Low RDS(ON) (Typ 12m)@VGS=4.5V(Typ 10.5m)@VGS=10VID : 38A1 8 Low Gate Charge (Typ 45nC)2 7RDS(ON) : 12m@VGS=4.5V Improved dv/dt Capability 634 5 100% Avalanche Tested10.5m@VGS=10V Application: DC-DC converter, Motor Control,Synchronous Rect
9.6. Size:993K samwin
swk130r06vt swha130r06vt swi130r06vt.pdf
SW130R06VT N-channel Enhanced mode SOP-8/DFN5*6/TO-251 MOSFET Features High ruggedness SOP-8 DFN5*6 TO-251 BVDSS : 60V Low RDS(ON) (Typ 14m)@VGS=4.5V (Typ 12m)@VGS=10V 5 ID : 58A 6 Low Gate Charge (Typ 55nC) 1 8 7 8 2 7 Improved dv/dt Capability RDS(ON) : 14m@ VGS=4.5V 4 6 3 3 100% Avalanche Tested 4 5 2 12m@ VGS=1
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