All MOSFET. SWF20N60K Datasheet

 

SWF20N60K Datasheet and Replacement


   Type Designator: SWF20N60K
   Marking Code: SW20N60K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

 SWF20N60K substitution

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SWF20N60K Datasheet (PDF)

 ..1. Size:694K  samwin
 swf20n60k.pdf pdf_icon

SWF20N60K

SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

 ..2. Size:647K  samwin
 sw20n60k swf20n60k.pdf pdf_icon

SWF20N60K

SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charge,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

 7.1. Size:716K  samwin
 swf20n65d swt20n65d.pdf pdf_icon

SWF20N60K

SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc

 7.2. Size:1121K  samwin
 swp20n65k swf20n65k sww20n65k swj20n65k.pdf pdf_icon

SWF20N60K

SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat

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Keywords - SWF20N60K MOSFET datasheet

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