2SK2139 Datasheet and Replacement
Type Designator: 2SK2139
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 30 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
2SK2139 substitution
2SK2139 Datasheet (PDF)
2sk2139.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
Datasheet: 2SK2131 , 2SK2132 , 2SK2133 , 2SK2134 , 2SK2135 , 2SK2136 , 2SK2137 , 2SK2138 , STP80NF70 , 2SK2140 , 2SK2141 , 2SK2157 , 2SK2158 , 2SK2159 , 2SK2207 , 2SK2208 , 2SK2234 .
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History: IRLW530A | IRFN054
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