All MOSFET. SWUI4N65D Datasheet

 

SWUI4N65D Datasheet and Replacement


   Type Designator: SWUI4N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-251
 

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SWUI4N65D Datasheet (PDF)

 ..1. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf pdf_icon

SWUI4N65D

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

Datasheet: SWT38N65KF , SWT47N65K2 , SWI4N60DC , SWD4N60DC , SWF4N65D , SWN4N65D , SWSI4N65D , SWMI4N65D , IRFP460 , SWD4N65D , SWS4N65D , SWB4N65D , SWP4N65D , SWMQI4N65D , SWI4N70D , SWN4N70D , SWD4N70D .

History: RUH3025M3

Keywords - SWUI4N65D MOSFET datasheet

 SWUI4N65D cross reference
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