All MOSFET. SWD4N65D Datasheet

 

SWD4N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD4N65D
   Marking Code: SW4N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO-252

 SWD4N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD4N65D Datasheet (PDF)

 ..1. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf

SWD4N65D SWD4N65D

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

 0.1. Size:913K  samwin
 swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf

SWD4N65D SWD4N65D

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2.4)@VGS=10V RDS(ON) : 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

 0.2. Size:1095K  samwin
 swf4n65da swn4n65da swd4n65da swnb4n65da.pdf

SWD4N65D SWD4N65D

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

 7.1. Size:1007K  samwin
 swf4n65k2 swn4n65k2 swd4n65k2.pdf

SWD4N65D SWD4N65D

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.10)@VGS=10V RDS(ON) : 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application:LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

 7.2. Size:840K  samwin
 swf4n65k swi4n65k swd4n65k.pdf

SWD4N65D SWD4N65D

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) :1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application:Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQPF9N50CF

 

 
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