SWS4N65D Specs and Replacement
Type Designator: SWS4N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 69 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: SOT-82
SWS4N65D substitution
SWS4N65D datasheet
swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf
SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d... See More ⇒
Detailed specifications: SWI4N60DC , SWD4N60DC , SWF4N65D , SWN4N65D , SWSI4N65D , SWMI4N65D , SWUI4N65D , SWD4N65D , IRF640 , SWB4N65D , SWP4N65D , SWMQI4N65D , SWI4N70D , SWN4N70D , SWD4N70D , SWF4N70D , SWP630D .
History: TSM4N90CZ | IXTY1R4N60P | IXTX24N100 | HGB017N10S | SIHF630S
Keywords - SWS4N65D MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TSM4N90CZ | IXTY1R4N60P | IXTX24N100 | HGB017N10S | SIHF630S
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