SWS4N65D PDF and Equivalents Search

 

SWS4N65D Specs and Replacement

Type Designator: SWS4N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: SOT-82

SWS4N65D substitution

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SWS4N65D datasheet

 ..1. Size:1049K  samwin
 swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf pdf_icon

SWS4N65D

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d... See More ⇒

Detailed specifications: SWI4N60DC, SWD4N60DC, SWF4N65D, SWN4N65D, SWSI4N65D, SWMI4N65D, SWUI4N65D, SWD4N65D, IRF640, SWB4N65D, SWP4N65D, SWMQI4N65D, SWI4N70D, SWN4N70D, SWD4N70D, SWF4N70D, SWP630D

Keywords - SWS4N65D MOSFET specs

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