All MOSFET. SWD4N70D Datasheet

 

SWD4N70D Datasheet and Replacement


   Type Designator: SWD4N70D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-252
 

 SWD4N70D substitution

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SWD4N70D Datasheet (PDF)

 ..1. Size:1038K  samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWD4N70D

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 ..2. Size:1038K  samwin
swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SWD4N70D

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

 7.1. Size:907K  samwin
swf4n70k2 swn4n70k2 swd4n70k2.pdf pdf_icon

SWD4N70D

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

 7.2. Size:1046K  samwin
swf4n70l swn4n70l swd4n70l.pdf pdf_icon

SWD4N70D

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

Datasheet: SWUI4N65D , SWD4N65D , SWS4N65D , SWB4N65D , SWP4N65D , SWMQI4N65D , SWI4N70D , SWN4N70D , IRF3710 , SWF4N70D , SWP630D , SWD630D , SWN6N70DA , SWSI6N70DA , SWUI6N70DA , SWD6N70DA , SWF6N70DA .

History: SIZ988DT | NTP60N06L | HSM4204

Keywords - SWD4N70D MOSFET datasheet

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