SWD4N70D MOSFET Datasheet: N-Ch, 700V, 4A. Full specification with pinout and replacement list

SWD4N70D Specs and Replacement

Type Designator: SWD4N70D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO-252

SWD4N70D substitution

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SWD4N70D datasheet

..1. Size:1038K samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒

..2. Size:1038K samwin
swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

7.1. Size:907K samwin
swf4n70k2 swn4n70k2 swd4n70k2.pdf pdf_icon

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 700V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.15 )@VGS=10V RDS(ON) 1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S... See More ⇒

7.2. Size:1046K samwin
swf4n70l swn4n70l swd4n70l.pdf pdf_icon

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V ID 4A High ruggedness Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour... See More ⇒