SWN6N70K
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWN6N70K
Marking Code: SW6N70K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 147.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 27
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO-251
SWN6N70K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWN6N70K
Datasheet (PDF)
..1. Size:964K samwin
swf6n70k swn6n70k swd6n70k.pdf
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1
..2. Size:862K samwin
sw6n70k swf6n70k swn6n70k swd6n70k.pdf
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source
7.3. Size:994K samwin
swf6n70db swd6n70db swn6n70db.pdf
SW6N70DBN-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFETFeaturesBVDSS : 700VTO-220F TO-252 TO-251NID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10VRDS(ON) : 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 21 100% Avalanche Tested112223 Application:LED, PC Power, Charger 3311. Gate 2. Drain 3. Source3Gen
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