SWD6N80D MOSFET Datasheet: N-Ch, 800V, 6A. Full specification with pinout and replacement list

SWD6N80D Specs and Replacement

Type Designator: SWD6N80D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-252

SWD6N80D substitution

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SWD6N80D datasheet

..1. Size:1426K samwin
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf pdf_icon

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED... See More ⇒

..2. Size:1303K samwin
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf pdf_icon

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 BVDSS 800V TO-262 TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED , Charger, SMPS 1.... See More ⇒

0.1. Size:802K samwin
swd6n80de.pdf pdf_icon

SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 800V High ruggedness ID 6A Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description... See More ⇒

9.1. Size:2234K samwin
sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf pdf_icon

SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l ... See More ⇒