All MOSFET. SWD6N80D Datasheet

 

SWD6N80D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD6N80D
   Marking Code: SW6N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-252

 SWD6N80D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD6N80D Datasheet (PDF)

 ..1. Size:1426K  samwin
 sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf

SWD6N80D SWD6N80D

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS : 800V TO-262N ID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application:LED

 ..2. Size:1303K  samwin
 swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf

SWD6N80D SWD6N80D

SW6N80DN-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFETFeaturesTO-251N TO-220F TO-252 BVDSS : 800VTO-262 TO-262NID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 211 1 1 1 100% Avalanche Tested22 2 2 233 3 3 3 Application:LED , Charger, SMPS1.

 0.1. Size:802K  samwin
 swd6n80de.pdf

SWD6N80D SWD6N80D

SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 800V High ruggedness ID : 6A Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) : 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application:LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description

 9.1. Size:2234K  samwin
 sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf

SWD6N80D SWD6N80D

SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l

 9.2. Size:835K  samwin
 swf6n60d swd6n60d swn6n60d.pdf

SWD6N80D SWD6N80D

SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS : 600V High ruggedness ID : 6A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) :1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application: UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source

 9.3. Size:987K  samwin
 swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf

SWD6N80D SWD6N80D

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat

 9.4. Size:964K  samwin
 swf6n70k swn6n70k swd6n70k.pdf

SWD6N80D SWD6N80D

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1

 9.5. Size:741K  samwin
 swd6n65d.pdf

SWD6N80D SWD6N80D

SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS : 650V Features ID : 6A High ruggedness RDS(ON) : 1.3 Low RDS(ON) (Typ 1.3)@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

 9.6. Size:862K  samwin
 sw6n70k swf6n70k swn6n70k swd6n70k.pdf

SWD6N80D SWD6N80D

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source

 9.7. Size:2234K  samwin
 swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf

SWD6N80D SWD6N80D

SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l

 9.8. Size:994K  samwin
 swf6n70db swd6n70db swn6n70db.pdf

SWD6N80D SWD6N80D

SW6N70DBN-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFETFeaturesBVDSS : 700VTO-220F TO-252 TO-251NID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10VRDS(ON) : 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 21 100% Avalanche Tested112223 Application:LED, PC Power, Charger 3311. Gate 2. Drain 3. Source3Gen

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top