SWF7N60D PDF and Equivalents Search

 

SWF7N60D Specs and Replacement

Type Designator: SWF7N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

SWF7N60D substitution

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SWF7N60D datasheet

 ..1. Size:999K  samwin
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWF7N60D

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 3 TV... See More ⇒

 ..2. Size:1026K  samwin
swf7n60d swp7n60d swi7n60d swd7n60d.pdf pdf_icon

SWF7N60D

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 ... See More ⇒

 7.1. Size:843K  samwin
swf7n60k swi7n60k.pdf pdf_icon

SWF7N60D

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Adaptor LED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr... See More ⇒

 8.1. Size:942K  samwin
swf7n65dd swn7n65dd swd7n65dd.pdf pdf_icon

SWF7N60D

SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charge, PC Power 1. Gate 2. Drain 3. So... See More ⇒

Detailed specifications: SWF6N70K, SWN6N70K, SWD6N70K, SWN6N80D, SWF6N80D, SWD6N80D, SWU6N80D, SWJ6N80D, IRFP260, SWP7N60D, SWI7N60D, SWD7N60D, SWP7N65D, SWI7N65D, SWN7N65D, SWD7N65D, SWF7N65D

Keywords - SWF7N60D MOSFET specs

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