SWI8N65DB MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

SWI8N65DB Specs and Replacement

   Type Designator: SWI8N65DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-251

SWI8N65DB substitution

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SWI8N65DB datasheet

..1. Size:1132K samwin
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SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charge, PC Power 3 3 3 3 1... See More ⇒

..2. Size:1066K samwin
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6.1. Size:1171K samwin
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SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID 8A High ruggedness RDS(ON) 1.1 Low RDS(ON) (Typ 1.1 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application Charg... See More ⇒

9.1. Size:986K samwin
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SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE... See More ⇒

Detailed specifications: SWHA7N65D , SWD7N70D , SWN7N70D , SWJ7N70D , SWF7N70D , SWF7N80D , SWU7N80D , SWJ7N80D , AO4407 , SWD8N65DB , SWF8N65DB , SWJ8N65DB , SWF8N70D , SWJ8N70D , SSF60R190S2 , SSP60R190S2 , SSW60R190S2 .