SWF8N70D Specs and Replacement

Type Designator: SWF8N70D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

SWF8N70D substitution

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SWF8N70D datasheet

 ..1. Size:710K  samwin
sw8n70d swf8n70d swj8n70d.pdf pdf_icon

SWF8N70D

SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS 700V High ruggedness ID 8A Low RDS(ON) (Typ 1.0m )@VGS=10 RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter... See More ⇒

 ..2. Size:775K  samwin
swf8n70d swj8n70d.pdf pdf_icon

SWF8N70D

SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS 700V High ruggedness ID 8A Low RDS(ON) (Typ 1.0m )@VGS=10 RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter... See More ⇒

 7.1. Size:791K  samwin
swf8n70k swd8n70k.pdf pdf_icon

SWF8N70D

SW8N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-252 TO-220F BVDSS 700V ID 8A High ruggedness Low RDS(ON) (Typ 0.55 )@VGS=10V RDS(ON) 0.55 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 Application LED, PC Power, Charger 3 3 1. Gate 2. Drain 3. Source 1 General ... See More ⇒

 9.1. Size:1171K  samwin
swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf pdf_icon

SWF8N70D

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID 8A High ruggedness RDS(ON) 1.1 Low RDS(ON) (Typ 1.1 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application Charg... See More ⇒

Detailed specifications: SWF7N70D, SWF7N80D, SWU7N80D, SWJ7N80D, SWI8N65DB, SWD8N65DB, SWF8N65DB, SWJ8N65DB, IRF1407, SWJ8N70D, SSF60R190S2, SSP60R190S2, SSW60R190S2, SSF60R190SFD, SSP60R190SFD, SSW60R190SFD, SSF60R260S2

Keywords - SWF8N70D MOSFET specs

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