SSP70R300S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP70R300S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
SSP70R300S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP70R300S2 Datasheet (PDF)
ssf70r300s2 ssp70r300s2 sst70r300s2.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor700V Super Junction Power MOSFET Gen-SS*70R190S2Rev. 1.1Aug. 2022www.supersemi.com.cnSSF70R190S2/SSP70R190S2700V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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ssf70r600s2 ssp70r600s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor700V Super Junction Power MOSFET Gen-SS*70R600S2Rev. 1.2Sep. 2023www.supersemi.com.cnSSF70R600S2/SSP70R600S2700V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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