All MOSFET. SST70R650S2 Datasheet

 

SST70R650S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SST70R650S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: TO252

 SST70R650S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SST70R650S2 Datasheet (PDF)

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