All MOSFET. SSW47N60S Datasheet

 

SSW47N60S MOSFET. Datasheet pdf. Equivalent

Type Designator: SSW47N60S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 391 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 64 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 910 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO247

SSW47N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSW47N60S Datasheet (PDF)

0.1. ssw47n60sfd ssa47n60sfd.pdf Size:1289K _cn_super_semi

SSW47N60S
SSW47N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult

0.2. ssw47n60s ssa47n60s.pdf Size:1214K _cn_super_semi

SSW47N60S
SSW47N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo

 

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