ISCNH345P PDF and Equivalents Search

 

ISCNH345P Specs and Replacement

Type Designator: ISCNH345P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO220

ISCNH345P substitution

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ISCNH345P datasheet

 ..1. Size:246K  inchange semiconductor
iscnh345p.pdf pdf_icon

ISCNH345P

isc N-Channel MOSFET Transistor ISCNH345P FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC co... See More ⇒

 7.1. Size:260K  inchange semiconductor
iscnh342p.pdf pdf_icon

ISCNH345P

isc N-Channel MOSFET Transistor ISCNH342P FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(... See More ⇒

 7.2. Size:329K  inchange semiconductor
iscnh340b.pdf pdf_icon

ISCNH345P

isc N-Channel MOSFET Transistor ISCNH340B FEATURES Drain Current I = 135A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 7.3. Size:251K  inchange semiconductor
iscnh346f.pdf pdf_icon

ISCNH345P

isc N-Channel MOSFET Transistor ISCNH346F FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE... See More ⇒

Detailed specifications: ISCNH320K, ISCNH325W, ISCNH327P, ISCNH328W, ISCNH339D, ISCNH340B, ISCNH342P, ISCNH342W, 2N60, ISCNH346F, ISCNL343D, ISCNL344D, ISCPL322D, IXFH60N60X2A, MN7R6-60PS, STH80N10LF7-2AG, VP2320N1

Keywords - ISCNH345P MOSFET specs

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