ZVN3320F MOSFET. Datasheet pdf. Equivalent

SOT23 N-CHANNEL ENHANCEMENTZVN3320FMODE VERTICAL DMOS FETISSUE 3 DECEMBER 1995 FEATURES* 200 Volt VDSS* RDS(on)=25DGPARTMARKING DETAIL MUSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 60 mAPulsed Drain Current IDM 1AGate-Source Voltage VGS 20 VPower Dissipation at

SOT23 N-CHANNEL ENHANCEMENTZVN3320FMODE VERTICAL DMOS FETISSUE 3 DECEMBER 1995 FEATURES* 200 Volt VDSS* RDS(on)=25DGPARTMARKING DETAIL MUSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 60 mAPulsed Drain Current IDM 1AGate-Source Voltage VGS 20 VPower Dissipation at

SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20

N-CHANNEL ENHANCEMENT0A ZVN3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 10VGS=10V D G9V S8V7V E-Line6VTO92 Compatible5VABSOLUTE MAXIMUM RATINGS.4VPARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 200 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS

N-CHANNEL ENHANCEMENT0A ZVN3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 10VGS=10V D G9V S8V7V E-Line6VTO92 Compatible5VABSOLUTE MAXIMUM RATINGS.4VPARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 200 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS

A Product Line ofDiodes IncorporatedZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) () 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and

SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20

N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip

A Product Line ofDiodes IncorporatedZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) () 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and

N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip

ZVN3306FTAwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG