WTM2300 Datasheet and Replacement
Type Designator: WTM2300
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23
WTM2300 substitution
WTM2300 Datasheet (PDF)
wtm2300.pdf

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR
wtm2302.pdf

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR
wtm2306.pdf

WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR
wtm2301.pdf

WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR
Datasheet: WMJ28N60C4 , WFD2N65L , WFD7N65L , WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , P55NF06 , WTM2301 , WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B .
Keywords - WTM2300 MOSFET datasheet
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