WTM3400 MOSFET. Datasheet pdf. Equivalent
Type Designator: WTM3400
Marking Code: A09T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 99 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT23
WTM3400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTM3400 Datasheet (PDF)
wtm3400.pdf
WTM3400N-Channel Enhancement Mode Power MOSFETDescription The WTM3400 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 30V, lD = 5.8AR
wtm3401.pdf
WTM3401-30V/-4.2A P Channel Advanced Power MOSFETFeaturesV R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V -3.3V Logic Level Control55m @-10V P Channel SOT23 Package -30V -4.2A 65m @ -4.5V Pb-Free, RoHS CompliantApplications Load Switch Switching circuits High-speed line driver Power Management Functions Order Information
wtm3415.pdf
WTM3415Enhancement Mode Power MOSFET P-Channel Description The WTM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4ASchematic diagram RDS(ON)
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