SPC10N80G MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

SPC10N80G Specs and Replacement

Type Designator: SPC10N80G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39.6 nS

Cossⓘ - Output Capacitance: 136 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SPC10N80G substitution

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SPC10N80G datasheet

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SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC ( ) V =10V 1.2 DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A... See More ⇒

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SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state... See More ⇒

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SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta... See More ⇒

Detailed specifications: 2N7002AK, 2310, 3407, SPA22N65G, SPA24N50G, SPA65R38G, SPA65R72G, SPC10N65G, K4145, SPC16N65G, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G