TDM31056 Specs and Replacement
Type Designator: TDM31056
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 405 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: DFN5X6?8
TDM31056 substitution
- MOSFET ⓘ Cross-Reference Search
TDM31056 datasheet
tdm31056.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM31056 DESCRIPTION The TDM31056 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm31050.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM31050 DESCRIPTION The TDM31050 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm31058.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM31058 DESCRIPTION The TDM31058 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm31035.pdf
DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM31035 DESCRIPTION The TDM31035 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 100V/ 13A RDS(ON) ... See More ⇒
Detailed specifications: SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G, SPE4N65G, SPE7N65G, TDM31035, TDM31050, 2SK3568, TDM31058, TDM31064, TDM31066, TDM3307A, TDM3404, TDM3405, TDM3406, TDM3407
Keywords - TDM31056 MOSFET specs
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History: 2N65KG-TMS4-T | 2SK3982-01MR
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