TDM3415 Specs and Replacement

Type Designator: TDM3415

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOP8

TDM3415 substitution

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TDM3415 datasheet

 ..1. Size:558K  techcode semi
tdm3415.pdf pdf_icon

TDM3415

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 8.1. Size:865K  techcode semi
tdm3412.pdf pdf_icon

TDM3415

DATASHEET Techcode Dual N-Channel Enhancement Mode MOSFET TDM3412 DESCRIPTION The TDM3412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES Channel 1 RDS(ON) ... See More ⇒

 9.1. Size:374K  techcode semi
tdm3428b.pdf pdf_icon

TDM3415

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3428B DESCRIPTION The TDM3428B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

 9.2. Size:633K  techcode semi
tdm3407.pdf pdf_icon

TDM3415

DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3407 DESCRIPTION The TDM3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 40V PMOS RDS(ON) ... See More ⇒

Detailed specifications: TDM31066, TDM3307A, TDM3404, TDM3405, TDM3406, TDM3407, TDM3408, TDM3412, IRFZ24N, TDM3420, TDM3421, TDM3424, TDM3426B, TDM3428B, TDM3430, TDM3432, TDM3434

Keywords - TDM3415 MOSFET specs

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