TDM3436 Specs and Replacement
Type Designator: TDM3436
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: DFN5X6-8
TDM3436 substitution
- MOSFET ⓘ Cross-Reference Search
TDM3436 datasheet
tdm3436.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3436 DESCRIPTION The TDM3436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm3434.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3434 DESCRIPTION The TDM3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm3432.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3432 DESCRIPTION The TDM3432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
tdm3430.pdf
DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3430 DESCRIPTION The TDM3430 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒
Detailed specifications: TDM3420, TDM3421, TDM3424, TDM3426B, TDM3428B, TDM3430, TDM3432, TDM3434, 7N60, TDM3444, TDM3452, TDM3458, TDM3466, TDM3478, TDM3482, TDM3484, TDM3508
Keywords - TDM3436 MOSFET specs
TDM3436 cross reference
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