All MOSFET. TF2302 Datasheet

 

TF2302 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TF2302
   Marking Code: A2sHB*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23

 TF2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TF2302 Datasheet (PDF)

 ..1. Size:595K  cn tuofeng
tf2302.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302TF2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad

 0.1. Size:615K  cn tuofeng
tf2302a.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302AN-Channel 20-V(D-S) MOSFETTF2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad

 9.1. Size:57K  ixys
ixtf230n085t.pdf

TF2302
TF2302

Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran

 9.2. Size:703K  cn tuofeng
tf2301a.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301ATF2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONL

 9.3. Size:627K  cn tuofeng
tf2307.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2307TF2307 P-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.075@-10V-30V -3.5A30.095@-4.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA79TF wAPPLICATIONL

 9.4. Size:623K  cn tuofeng
tf2305b.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2305BTF2305B P-Channel 16-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.060@-4.5V-16V -4.0A30.080@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA5BTF wAPPLICATION

 9.5. Size:4217K  cn tuofeng
tf2300.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETTF2300N-Channel 20-V(D-S) MOSFETTF2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface

 9.6. Size:2967K  cn tuofeng
tf2306.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2306N-Channel 30-V(D-S) MOSFETTF2306V(BR)DSS RDS(on)MAX IDSOT-230.057@ 10V330V3.6 A1.GATE0.094@ 4.5 V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageA69TF wAPPLICATION

 9.7. Size:677K  cn tuofeng
tf2301.pdf

TF2302
TF2302

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301TF2301 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.8A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount package-A1sHB wAPPLICATION

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: R6025FNZ1 | STP5NA60 | FQA7N90 | BSC030N03MSG

 

 
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