TF2306 Specs and Replacement
Type Designator: TF2306
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT23
TF2306 substitution
- MOSFET ⓘ Cross-Reference Search
TF2306 datasheet
ixtf230n085t.pdf
Advance Technical Information VDSS = 85 V IXTF230N085T TrenchMVTM ID25 = 130 A Power MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface) N-Channel Enhancement Mode ISOPLUS i4-PakTM (5-lead) (IXTF) Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Tran... See More ⇒
tf2301a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2301A TF2301A P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.085 @-4.5V -20V -3.0A 3 0.110 @-2.5V 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package A1 w APPLICATION L... See More ⇒
tf2307.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2307 TF2307 P-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.075 @-10V -30V -3.5A 3 0.095 @-4.5V 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package A79TF w APPLICATION L... See More ⇒
Detailed specifications: TDM3726, TDM3736, TDM3742, TDM3744, TF2300, TF2301, TF2302, TF2305B, IRF540N, TF2310, TF3400, TF3401, TF3402, TF3407, TF3414, TF3415, TF3423
Keywords - TF2306 MOSFET specs
TF2306 cross reference
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