TW2203FL-Y Datasheet and Replacement
Type Designator: TW2203FL-Y
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 528 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN3X3-8L
TW2203FL-Y substitution
TW2203FL-Y Datasheet (PDF)
tw2203fl-y.pdf
TW2203FL-YP-Channel Enhancement Mode Power MOSFET Features General Description VDS = -20V, DC-DC Converters ID = -34A Backlighting RDS(ON) @VGS= -4.5V, TYP 12.1m Power Management Functions RDS(ON) @VGS= -2.5V, TYP 14.3m RDS(ON) @VGS= -1.8V, TYP 18m Pin Configurations DFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted
stw220nf75.pdf
STW220NF75N-CHANNEL 75V - 0.004 - 120A TO-247STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTW220NF75 75V
Datasheet: TF3423 , TW0115SR-Y , TW1504ESG , TW1515ASI , TW1525SI , TW1527SI , TW1529SJ , TW1754SI-X , IRFP250N , TW3134KDW , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , TWS1008SQ .
History: FQD5N40TF | KP809E1 | STB21NM50N | OSG65R200KF | NCE80H12D | SHD220212 | IRF3805SPBF
Keywords - TW2203FL-Y MOSFET datasheet
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History: FQD5N40TF | KP809E1 | STB21NM50N | OSG65R200KF | NCE80H12D | SHD220212 | IRF3805SPBF
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