All MOSFET. TW4614SQ-X Datasheet

 

TW4614SQ-X Datasheet and Replacement


   Type Designator: TW4614SQ-X
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOP8
 

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TW4614SQ-X Datasheet (PDF)

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TW4614SQ-X

TW4614SQ-X60V Complementary Enhancement Mode Power MOSFET Features General Description N-channel P-channel used in inverter VDS = 60V, VDS = -60 V other applications ID = 4.4A ID = -4.2A RDS(ON) RDS(ON) VGS= 10V, TYP 37 m VGS= -10V, TYP 53 m VGS= 4.5V, TYP 43 m VGS= -4.5V, TYP 60 m Pin Configurations SOP8 Absolute Maximum Ratings @T =25

Datasheet: TW1504ESG , TW1515ASI , TW1525SI , TW1527SI , TW1529SJ , TW1754SI-X , TW2203FL-Y , TW3134KDW , IRFB4115 , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , TWE3139K , TWS1008SQ , TWS6428FJ , TWS6602FJ .

History: BUK961R4-30E | 2N6760JTXV | STH7N90 | 40819 | DCCF160M120G1 | 2N6783 | CED4301

Keywords - TW4614SQ-X MOSFET datasheet

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