All MOSFET. TW4614SQ-X Datasheet


TW4614SQ-X MOSFET. Datasheet pdf. Equivalent

Type Designator: TW4614SQ-X

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 4.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24.2 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm

Package: SOP8

TW4614SQ-X Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TW4614SQ-X Datasheet (PDF)

..1. tw4614sq-x.pdf Size:1608K _cn_twgmc


TW4614SQ-X60V Complementary Enhancement Mode Power MOSFET Features General Description N-channel P-channel used in inverter VDS = 60V, VDS = -60 V other applications ID = 4.4A ID = -4.2A RDS(ON) RDS(ON) VGS= 10V, TYP 37 m VGS= -10V, TYP 53 m VGS= 4.5V, TYP 43 m VGS= -4.5V, TYP 60 m Pin Configurations SOP8 Absolute Maximum Ratings @T =25

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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