TWE3139K MOSFET. Datasheet pdf. Equivalent
Type Designator: TWE3139K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
Package: SOT523
TWE3139K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TWE3139K Datasheet (PDF)
twe3139k.pdf
MMBT3904TWE3139KAO3400SI2305Feature Application Surface Mount Package Load/Power Switching P-Channel Switch with Low RDS(on) Interfacing, Logic Switching Operated at Low Logic Level Gate Drive Battery Management for Ultra Small Portable ESD Protected ElectronicsCircuit diagram Package:TPSOT-523Absolute maximum ratings (Ta=25 unless otherwise no
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLS70R600-P
History: BLS70R600-P
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918