TWE3139K Datasheet and Replacement
Type Designator: TWE3139K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm
Package: SOT523
TWE3139K substitution
TWE3139K Datasheet (PDF)
twe3139k.pdf

MMBT3904TWE3139KAO3400SI2305Feature Application Surface Mount Package Load/Power Switching P-Channel Switch with Low RDS(on) Interfacing, Logic Switching Operated at Low Logic Level Gate Drive Battery Management for Ultra Small Portable ESD Protected ElectronicsCircuit diagram Package:TPSOT-523Absolute maximum ratings (Ta=25 unless otherwise no
Datasheet: TW1754SI-X , TW2203FL-Y , TW3134KDW , TW4614SQ-X , TW7404FJ , TW7407FL-Y , TW7408FN , TW7468FL , K3569 , TWS1008SQ , TWS6428FJ , TWS6602FJ , TWS6604FL , SL100N08 , SL10N65F , SL11N65CK , SL11N65C .
History: BSZ440N10NS3G | AP9565AGJ-HF
Keywords - TWE3139K MOSFET datasheet
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History: BSZ440N10NS3G | AP9565AGJ-HF



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