SL21N65CF MOSFET. Datasheet pdf. Equivalent
Type Designator: SL21N65CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 83 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
SL21N65CF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL21N65CF Datasheet (PDF)
sl21n65c.pdf
SL21N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 180 m DS(ON) MAXNew technology for high voltage device ID 21 A Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mo
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: NUS3116MT
History: NUS3116MT
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