SL2312
MOSFET. Datasheet pdf. Equivalent
Type Designator: SL2312
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
tonⓘ - Turn-on Time: 20
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
SOT23
SL2312
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL2312
Datasheet (PDF)
..1. Size:1452K slkor
sl2312.pdf
SL2312SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3
9.1. Size:1664K slkor
sl2314.pdf
SL231420V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SL2314 is the N-Channel logic enhancement 20V/4.5A, RDS(ON)=25m (typ.)@VGS=4.5V mmode power field effect transistor is produced using 20V/2.5A, RDS(ON)=55 (typ.)@VGS=2.5V high cell density advanced trench technology.. 20V/2.0A, RDS(ON)=80m (typ.)@VGS=1.8V This high density process is
9.2. Size:710K slkor
sl2319a.pdf
SL2319AP-Channel Enhancement Mode Field Effect TransistorProduct Summary V -40VDS I -4.4AD R ( at V =-10V) 90mohmDS(ON) GS R ( at V =-4.5V)DS(ON) GS 150mohmGeneral Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Absolute Maximum Ratings (T =25unless otherwise noted)AP
9.3. Size:1147K slkor
sl2318.pdf
SL231840V/4.1A N Channel Advanced Power MOSFETFeatures V(BR)DSS RDS(ON) Typ ID Max Low RDS(on) @VGS=10V 4.5V Logic Level Control 29m @ 10V N Channel SOT23 Package 40V 4.1A36m @ 4.5V Pb-Free, RoHS Compliant Applications Load Switch DC/DC Converter Switching CircuitsPower ManagementOrder Information SOT23 Marking Product Package Pack
9.4. Size:419K slkor
sl2310.pdf
SL2310N-Channel Power MOSFET DGeneral Features G VDS =60V,ID =3A RDS(ON)
Datasheet: IRFP360LC
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