All MOSFET. 2SK2826 Datasheet

 

2SK2826 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2826
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 1200 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220AB

 2SK2826 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2826 Datasheet (PDF)

 ..1. Size:80K  1
2sk2826.pdf

2SK2826 2SK2826

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2826SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK2826 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK2826 TO-220AB2SK2826-S TO-262FEATURES2SK2826-ZJ TO-263 Super Low On-state ResistanceNote2SK2826-Z TO-220SMDRDS(on)

 ..2. Size:280K  inchange semiconductor
2sk2826.pdf

2SK2826 2SK2826

isc N-Channel MOSFET Transistor 2SK2826FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:44K  1
2sk2828.pdf

2SK2826 2SK2826

2SK2828Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-514 C (Z)4th. EditionFeb 1999Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DCDC converter Avalanche ratingsOutlineTO3PD21G1. Gate2. Drain12 (Flange)333. SourceS2SK2828Abs

 8.2. Size:904K  1
2sk2821.pdf

2SK2826 2SK2826

 8.3. Size:72K  1
2sk2827-01.pdf

2SK2826 2SK2826

FUJI POWER MOSFET2SK2827-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(

 8.4. Size:907K  1
2sk2820.pdf

2SK2826 2SK2826

 8.5. Size:325K  toshiba
2sk2823.pdf

2SK2826 2SK2826

2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-5

 8.6. Size:304K  toshiba
2sk2824.pdf

2SK2826 2SK2826

2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70TO

 8.7. Size:300K  toshiba
2sk2825.pdf

2SK2826 2SK2826

2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC JEITA Cha

 8.8. Size:286K  inchange semiconductor
2sk2821.pdf

2SK2826 2SK2826

isc N-Channel MOSFET Transistor 2SK2821FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.9. Size:289K  inchange semiconductor
2sk2827.pdf

2SK2826 2SK2826

isc N-Channel MOSFET Transistor 2SK2827FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.10. Size:286K  inchange semiconductor
2sk2820.pdf

2SK2826 2SK2826

isc N-Channel MOSFET Transistor 2SK2820FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top