2SK2874-01S Specs and Replacement
Type Designator: 2SK2874-01S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 100
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO252
-
MOSFET ⓘ Cross-Reference Search
2SK2874-01S datasheet
..1. Size:89K 1
2sk2874-01l 2sk2874-01s.pdf 
FUJI POWER MOSFET 2SK2874-01L,S N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series T-pack (S) T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent cir... See More ⇒
..2. Size:286K inchange semiconductor
2sk2874-01s.pdf 
isc N-Channel MOSFET Transistor 2SK2874-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
4.1. Size:354K inchange semiconductor
2sk2874-01l.pdf 
isc N-Channel MOSFET Transistor 2SK2874-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.1. Size:78K 1
2sk2877-01.pdf 
FUJI POWER MOSFET 2SK2877-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=... See More ⇒
8.2. Size:78K 1
2sk2871-01.pdf 
FUJI POWER MOSFET 2SK2871-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (... See More ⇒
8.3. Size:79K 1
2sk2873-01.pdf 
FUJI POWER MOSFET 2SK2873-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=... See More ⇒
8.4. Size:268K 1
2sk2870-01l 2sk2870-01s.pdf 
2SK2870-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent circuit ... See More ⇒
8.5. Size:77K 1
2sk2875-01.pdf 
FUJI POWER MOSFET 2SK2875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (... See More ⇒
8.6. Size:248K fuji
2sk2879-01.pdf 
N-channel MOS-FET 2SK2879-01 FAP-IIS Series 500V 0,38 20A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characte... See More ⇒
8.7. Size:245K fuji
2sk2876-01mr.pdf 
N-channel MOS-FET 2SK2876-01MR FAP-IIS Series 500V 1,5 6A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character... See More ⇒
8.8. Size:236K fuji
2sk2872.pdf 
N-channel MOS-FET 2SK2872-01MR FAP-IIS Series 450V 1,2 8A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character... See More ⇒
8.9. Size:286K inchange semiconductor
2sk2879-01.pdf 
isc N-Channel MOSFET Transistor 2SK2879-01 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.10. Size:286K inchange semiconductor
2sk2877-01.pdf 
isc N-Channel MOSFET Transistor 2SK2877-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.11. Size:289K inchange semiconductor
2sk2871-01.pdf 
isc N-Channel MOSFET Transistor 2SK2871-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.12. Size:279K inchange semiconductor
2sk2876-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK2876-01MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.13. Size:354K inchange semiconductor
2sk2870l.pdf 
isc N-Channel MOSFET Transistor 2SK2870L FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.14. Size:286K inchange semiconductor
2sk2870s.pdf 
isc N-Channel MOSFET Transistor 2SK2870S FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.15. Size:286K inchange semiconductor
2sk2873-01.pdf 
isc N-Channel MOSFET Transistor 2SK2873-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.16. Size:280K inchange semiconductor
2sk2872-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK2872-01MR FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.17. Size:288K inchange semiconductor
2sk2875-01.pdf 
isc N-Channel MOSFET Transistor 2SK2875-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
Detailed specifications: 2SK2849S
, 2SK2870-01L
, 2SK2870-01S
, 2SK2870L
, 2SK2870S
, 2SK2871-01
, 2SK2873-01
, 2SK2874-01L
, 7N65
, 2SK2875-01
, 2SK2877-01
, 2SK2883B
, 2SK2883K
, 2SK2884B
, 2SK2884K
, 2SK2889B
, 2SK2889K
.
History: 40N20
| HSCB2307
| QM2410G
| NCE1205
Keywords - 2SK2874-01S MOSFET specs
2SK2874-01S cross reference
2SK2874-01S equivalent finder
2SK2874-01S pdf lookup
2SK2874-01S substitution
2SK2874-01S replacement
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