2SK2890-01 Datasheet and Replacement
Type Designator: 2SK2890-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id| ⓘ - Maximum Drain Current: 50
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 2000
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
2SK2890-01 Datasheet (PDF)
..1. Size:222K 1
2sk2890-01.pdf 
N-channel MOS-FET2SK2890-01FAP-IIIB Series 30V 0,0105 50A 50W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics- Absolute Maximum Ratings (TC=25C), unless otherwise specified
..2. Size:280K inchange semiconductor
2sk2890-01.pdf
isc N-Channel MOSFET Transistor 2SK2890-01FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.1. Size:322K fuji
2sk2890-01mr.pdf
2SK2890-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
8.1. Size:242K 1
2sk2897-01.pdf
N-channel MOS-FET2SK2897-01FAP-IIIB Series 60V 0,02 45A 40W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics- Absolute Maximum Ratings (TC=25C), unless otherwise specified
8.2. Size:297K fuji
2sk2892-01r.pdf
2SK2892-01RFUJI POWER MOSFET[200509]N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
8.3. Size:304K fuji
2sk2897-01mr.pdf
2SK2897-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
8.4. Size:284K fuji
2sk2895-01.pdf
FUJI POWER MOSFET2SK2895-01200511N-CHANNEL SILICON POWER MOSFETFAP-IIIB SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratingsDra
8.5. Size:324K fuji
2sk2898-01.pdf
2SK2898-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
8.6. Size:302K fuji
2sk2896-01l-01s.pdf
2SK2896-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent circuit schematicAb
8.7. Size:309K fuji
2sk2891-01.pdf
2SK2891-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
8.8. Size:324K fuji
2sk2899-01r.pdf
2SK2899-01RFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
8.9. Size:317K fuji
2sk2894-01r.pdf
2SK2894-01RFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
8.10. Size:315K fuji
2sk2893-01.pdf
2SK2893-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
8.11. Size:357K inchange semiconductor
2sk2896-01s.pdf
isc N-Channel MOSFET Transistor 2SK2896-01SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.12. Size:247K inchange semiconductor
2sk2892-01r.pdf
isc N-Channel MOSFET Transistor 2SK2892-01RFEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.13. Size:289K inchange semiconductor
2sk2895-01.pdf
isc N-Channel MOSFET Transistor 2SK2895-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
8.14. Size:286K inchange semiconductor
2sk2898-01.pdf
isc N-Channel MOSFET Transistor 2SK2898-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.15. Size:286K inchange semiconductor
2sk2891-01.pdf
isc N-Channel MOSFET Transistor 2SK2891-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.16. Size:273K inchange semiconductor
2sk2899-01r.pdf
isc N-Channel MOSFET Transistor 2SK2899-01RFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.17. Size:283K inchange semiconductor
2sk2896-01l.pdf
isc N-Channel MOSFET Transistor 2SK2896-01LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.18. Size:269K inchange semiconductor
2sk2894-01r.pdf
isc N-Channel MOSFET Transistor 2SK2894-01RFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.19. Size:247K inchange semiconductor
2sk2893-01.pdf
isc N-Channel MOSFET Transistor 2SK2893-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
8.20. Size:280K inchange semiconductor
2sk2897-01.pdf
isc N-Channel MOSFET Transistor 2SK2897-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
Datasheet: 2SK2875-01
, 2SK2877-01
, 2SK2883B
, 2SK2883K
, 2SK2884B
, 2SK2884K
, 2SK2889B
, 2SK2889K
, IRF4905
, 2SK3026
, 2SK3027
, 2SK3028
, 2SK3029
, 2SK3032
, 2SK3033
, 2SK3034
, 2SK3035
.
History: GSM3400
Keywords - 2SK2890-01 MOSFET datasheet
2SK2890-01 cross reference
2SK2890-01 equivalent finder
2SK2890-01 lookup
2SK2890-01 substitution
2SK2890-01 replacement
