All MOSFET. 2SK3060-Z Datasheet

 

2SK3060-Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3060-Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 1 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 600 nS

Drain-Source Capacitance (Cd): 700 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO220SMD

2SK3060-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3060-Z Datasheet (PDF)

..1. 2sk3060-z.pdf Size:357K _inchange_semiconductor

2SK3060-Z 2SK3060-Z

isc N-Channel MOSFET Transistor 2SK3060-ZFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.1. 2sk3060-zj.pdf Size:357K _inchange_semiconductor

2SK3060-Z 2SK3060-Z

isc N-Channel MOSFET Transistor 2SK3060-ZJFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

6.1. 2sk3060-s.pdf Size:283K _inchange_semiconductor

2SK3060-Z 2SK3060-Z

isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 7.1. 2sk3060.pdf Size:81K _1

2SK3060-Z 2SK3060-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

7.2. 2sk3060.pdf Size:289K _inchange_semiconductor

2SK3060-Z 2SK3060-Z

isc N-Channel MOSFET Transistor 2SK3060FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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