All MOSFET. 2SK3089K Datasheet

 

2SK3089K MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3089K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO262

2SK3089K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3089K Datasheet (PDF)

..1. 2sk3089k.pdf Size:283K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3089KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

7.1. 2sk3089.pdf Size:188K _toshiba

2SK3089K
2SK3089K

2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3089 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 25 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =

7.2. 2sk3089b.pdf Size:357K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3089BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. 2sk3081.pdf Size:45K _1

2SK3089K
2SK3089K

2SK3081Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-636A (Z)3rd. EditionJul. 1998Features Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3081Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS

8.2. 2sk3080.pdf Size:45K _1

2SK3089K
2SK3089K

2SK3080Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-635A (Z)2nd. EditionMar. 2001Features Low on-resistanceRDS(on) = 20 m typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switchingOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3080Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrai

 8.3. 2sk3085.pdf Size:177K _toshiba

2SK3089K
2SK3089K

2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS

8.4. 2sk3084.pdf Size:138K _toshiba

2SK3089K
2SK3089K

 8.5. 2sk3082s-l.pdf Size:91K _renesas

2SK3089K
2SK3089K

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

8.6. 2sk3082stl.pdf Size:93K _renesas

2SK3089K
2SK3089K

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

8.7. rej03g1065 2sk3082lsds.pdf Size:108K _renesas

2SK3089K
2SK3089K

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. 2sk3082.pdf Size:94K _renesas

2SK3089K
2SK3089K

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

8.9. 2sk3082l.pdf Size:283K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3082LFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.10. 2sk3081.pdf Size:289K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3081FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.11. 2sk3082s.pdf Size:357K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3082SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.12. 2sk3085.pdf Size:289K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3085FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.13. 2sk3080.pdf Size:289K _inchange_semiconductor

2SK3089K
2SK3089K

isc N-Channel MOSFET Transistor 2SK3080FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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