2SK3090B MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3090B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO263
2SK3090B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3090B Datasheet (PDF)
..1. 2sk3090b.pdf 
Size:357K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3090BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
7.1. 2sk3090.pdf Size:209K _toshiba
2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 16 m (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =
7.2. 2sk3090k.pdf Size:283K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3090KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. 2sk3099ls.pdf Size:31K _1
Ordering number : EN86282SK3099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3099LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
8.2. 2sk3093ls.pdf Size:49K _1
Ordering number : EN86222SK3093LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3093LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
8.3. 2sk3095ls.pdf Size:49K _1
Ordering number : EN86242SK3095LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3095LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
8.4. 2sk3096.pdf Size:96K _sanyo
www.DataSheet.co.krOrdering number : EN86252SK3096SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3096ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source
8.5. 2sk3098.pdf Size:46K _sanyo
Ordering number : EN86272SK3098SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3098ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 V
8.6. 2sk3094.pdf Size:96K _sanyo
www.DataSheet.co.krOrdering number : EN86232SK3094SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3094ApplicationsFeatures High-speed switching. Low ON-resistance. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source
8.7. 2sk3092.pdf Size:31K _sanyo
Ordering number : ENN67882SK3092N-Channel Silicon MOSFET2SK3092Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2083B[2SK3092]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPPackage Dimensionsunit : mm2092B[2SK3092]6.5 2.35.0 0.540.
8.8. 2sk3096.pdf Size:289K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3096FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO
8.9. 2sk3098.pdf Size:289K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3098FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
8.10. 2sk3092d.pdf Size:286K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3092DFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
8.11. 2sk3094.pdf Size:289K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3094FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
8.12. 2sk3092i.pdf Size:354K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3092IFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
8.13. 2sk3099ls.pdf Size:279K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3099LSFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB
8.14. 2sk3093ls.pdf Size:279K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3093LSFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
8.15. 2sk3095ls.pdf Size:279K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3095LSFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
LIST
Last Update
MOSFET: NCEP85T16 | NCEP85T15 | NCEP85T14D | NCEP85T14 | NCEP85T12D | NCEP85T12 | NCEP85T11 | NCEP60T20T | NCEP60T20A | NCEP60T20 | NCEP60T18 | NCEP60T15G | NCEP60T12T | NCEP60T12AK | NCEP6090K | NCEP6090