SLF6N70U MOSFET. Datasheet pdf. Equivalent
Type Designator: SLF6N70U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO251
SLF6N70U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLF6N70U Datasheet (PDF)
..1. Size:1329K cn tuofeng
slp6n70u slf6n70u.pdf
slp6n70u slf6n70u.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD700V N-Channel MOSFETSLP6N70U/SLF6N70USLP6N70U/SLF6N70UGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.8A, 700V, RDS(on) typ = 1.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored to - High ruggednessminimi
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