SSM3J356R Datasheet. Specs and Replacement

Type Designator: SSM3J356R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 29 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT23

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SSM3J356R datasheet

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SSM3J356R

SSM3J356R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J356R SSM3J356R SSM3J356R SSM3J356R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)... See More ⇒

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SSM3J356R

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SSM3J356R

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 1.2 V drive 0.8 0.05 Low ON-resistance R = 44 (max) (@V = -1.2 V) on GS R = 22 (max) (@V = -1.5 V) on GS 1 R = 11 (max) (@V = -2.5 V) on GS R = 8 (max) (@V = -4.0 V) o... See More ⇒

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SSM3J356R

SSM3J351R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J351R SSM3J351R SSM3J351R SSM3J351R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V drive (2) Low drain-source on-resistance RDS(ON) = 107 m (typ.) (VGS = -10 V) RDS(ON) = 122 m (typ.) (VGS = -4.5 V) RDS(ON) = 1... See More ⇒

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Detailed specifications: TF2369, TF3404, TF3410, TF3420, TF68N75, TF68N80, RFM04U6P, SSM3J351R, IRF540N, SSM3J358R, SSM3J56ACT, SSM3K344R, SSM3K345R, SSM3K35AMFV, SSM3K361R, SSM3K56ACT, SSM3K7002CFU

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