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TK290P65Y Specs and Replacement

Type Designator: TK290P65Y

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: DPAK

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TK290P65Y datasheet

 ..1. Size:451K  toshiba
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TK290P65Y

TK290P65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P65Y TK290P65Y TK290P65Y TK290P65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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TK290P65Y

TK290P60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P60Y TK290P60Y TK290P60Y TK290P60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 7.2. Size:208K  inchange semiconductor
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TK290P65Y

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290P60Y FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 9.1. Size:448K  toshiba
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TK290P65Y

TK290A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290A65Y TK290A65Y TK290A65Y TK290A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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Detailed specifications: SSM3K35AMFV, SSM3K361R, SSM3K56ACT, SSM3K7002CFU, SSM3K72KFS, SSM6J511NU, T2N7002AK, T2N7002BK, IRF3710, TK380P60Y, TK380P65Y, TK750A60F, TPCA8123, TPH1500CNH, TPH1R306PL, TPH1R403NL, TPH1R712MD

Keywords - TK290P65Y MOSFET specs

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