ZVP2120A Datasheet and Replacement
Type Designator: ZVP2120A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
Package: ELINE
ZVP2120A substitution
ZVP2120A Datasheet (PDF)
zvp2120a.pdf
P-CHANNEL ENHANCEMENT0CZVP2120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS. T V IT ITD i V I VD VV i D i T ID I D i ID V I V V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).). T I IT DITI D i VD V ID V VV I T I V V I
zvp2120astoa zvp2120astob zvp2120astz.pdf
P-CHANNEL ENHANCEMENT0CZVP2120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS. T V IT ITD i V I VD VV i D i T ID I D i ID V I V V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).). T I IT DITI D i VD V ID V VV I T I V V I
zvp2120gta zvp2120gtc.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2120GMODE VERTICAL DMOS FETISSUE 3 - OCTOBER 1995 T V I VD D D T I D T I V S T T V DGABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V V ID VD V
zvp2120g.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2120GMODE VERTICAL DMOS FETISSUE 3 - OCTOBER 1995 T V I VD D D T I D T I V S T T V DGABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V V ID VD V
Datasheet: ZVP0545A , ZVP0545G , ZVP1320A , ZVP1320F , ZVP2106A , ZVP2106G , ZVP2110A , ZVP2110G , IRF2807 , ZVP2120G , ZVP3306A , ZVP3306F , ZVP3310A , ZVP3310F , ZVP4105A , ZVP4424A , ZVP4424G .
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