All MOSFET. TK380P65Y Datasheet

 

TK380P65Y Datasheet and Replacement


   Type Designator: TK380P65Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DPAK
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TK380P65Y Datasheet (PDF)

 ..1. Size:446K  toshiba
 tk380p65y.pdf pdf_icon

TK380P65Y

TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.1. Size:446K  toshiba
 tk380p60y.pdf pdf_icon

TK380P65Y

TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.1. Size:442K  toshiba
 tk380a65y.pdf pdf_icon

TK380P65Y

TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)

 9.2. Size:443K  toshiba
 tk380a60y.pdf pdf_icon

TK380P65Y

TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

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History: VBNC1303 | IRFS4010PBF

Keywords - TK380P65Y MOSFET datasheet

 TK380P65Y cross reference
 TK380P65Y equivalent finder
 TK380P65Y lookup
 TK380P65Y substitution
 TK380P65Y replacement

 

 
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