TPH4R10ANL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPH4R10ANL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: SOP8
TPH4R10ANL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPH4R10ANL Datasheet (PDF)
tph4r10anl.pdf
TPH4R10ANLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R10ANLTPH4R10ANLTPH4R10ANLTPH4R10ANL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge : QSW = 21 nC (typ.)(3) Small ou
tph4r003nl.pdf
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tph4r50anh.pdf
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tph4r606nh.pdf
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tph4r008nh.pdf
TPH4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R008NHTPH4R008NHTPH4R008NHTPH4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 18 nC (typ.)(4)
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