All MOSFET. WSD2018ADN22 Datasheet

 

WSD2018ADN22 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD2018ADN22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFNWB2X2-6L-J

 WSD2018ADN22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD2018ADN22 Datasheet (PDF)

 ..1. Size:1808K  winsok
wsd2018adn22.pdf

WSD2018ADN22
WSD2018ADN22

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

 7.1. Size:2643K  winsok
wsd2018dn22.pdf

WSD2018ADN22
WSD2018ADN22

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

 7.2. Size:1786K  winsok
wsd2018bdn22.pdf

WSD2018ADN22
WSD2018ADN22

WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req

 8.1. Size:1316K  winsok
wsd2012dn25.pdf

WSD2018ADN22
WSD2018ADN22

WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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